logo

FDN357N Datasheet, ON Semiconductor

FDN357N mosfet equivalent, n-channel mosfet.

FDN357N Avg. rating / M : 1.0 rating-11

datasheet Download

FDN357N Datasheet

Features and benefits


* 1.9 A, 30 V
* RDS(ON) = 0.09 W @ VGS = 4.5 V
* RDS(ON) = 0.06 W @ VGS = 10 V
* Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary .

Application

in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low i.

Description

SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. Thes.

Image gallery

FDN357N Page 1 FDN357N Page 2 FDN357N Page 3

TAGS

FDN357N
N-Channel
MOSFET
FDN352AP
FDN358P
FDN359AN
ON Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts